inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 10N80 features drain current i d = 10a@ t c =25 drain source voltage- : v dss = 800v(min) static drain-source on-resistance : r ds(on) = 0.95 (max) avalanche energy specified fast switching simple drive requirements applications switch mode power supply. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 800 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 10 a i dm drain current-single plused 40 a p d total dissipation @t c =25 280 w t j max. operating junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.45 /w r th j-a thermal resistance, junction to ambient 40 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 10N80 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =250 a 800 v v gs (th ) gate threshold voltage v ds = 5v; i d =250 a 2.0 3.5 v v sd diode forward on-voltage i s = 10a ;v gs = 0 1.4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 5.0a 0.95 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds =800v; v gs = 0 25 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 2700 3500 pf c rss reverse transfer capacitance 110 130 c oss output capacitance 260 300 t r rise time v gs =10v; i d =10.0a; v dd =400v; r l =9.6 58 125 ns t d(on) turn-on delay time 29 70 t f fall time 48 105 t d(off) turn-off delay time 152 315 pdf pdffactory pro www.fineprint.cn
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